PART |
Description |
Maker |
MGFL45V1920 L45V1920 |
From old datasheet system 1.9-2.0GHz BAND 32W INTERNALLY MATCHD GaAs FET 1.9-2.0 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC45V5964A C455964A1 |
5.9 - 6.4 GHz BAND 32W INTERNALLY MATCHED GaAs FET From old datasheet system 5.9~6.4GHz BAND 32W INTERNALLY MATCHD GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
ENA0389A MCH400912 ENA0389 |
RF Transistor, 3.5V, 40mA, fT=25GHz, NPN Single MCPH4 UHF to X Band Low-Noise Amplifier and OSC Applications
|
ON Semiconductor Sanyo Semicon Device
|
MGFL45V1920A_04 MGFL45V1920A MGFL45V1920A04 |
1.9 - 2.0GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
EIB1213-2P |
12.75-13.25GHz 2W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
EIB1213-4P |
12.75-13.25GHz 4W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
IRPLLNR2U IRPLLNR2E |
32W Fully-integrated linear lighting ballast, IR21571, U.S. version, 120VAC line, 32W/T8 lamp Fully-integrated linear lighting ballast, IR21571, European version, 230VAC line, 36W/T8 lamp
|
International Rectifier
|
TDA2050V |
32W Hi-Fi AUDIO POWER AMPLIFIER 32W高保真音频功率放大器
|
STMicroelectronics N.V.
|
ATV312H037N4 |
variable speed drive ATV312 - 0.37kW -1.5kVA - 32W - 380..500 V- 3-phase supply
|
List of Unclassifed Manufacturers
|
LQP03TN12NJ04 AN26032A LQP03TN8N2H04 GRM33B30J104K |
Ultra small , Single Band LNA-IC with Band-limiting filter for 600 MHz Band Applications
|
Panasonic Battery Group
|
SKY77916-11 |
Tx-Rx FEM for Quad-Band GSM /GPRS / EDGE w/ 14 Linear TRx Switch Ports, Dual-Band TD-SCDMA, and TDD LTE Band 39
|
Skyworks Solutions Inc.
|
SKY77912-21 |
Tx-Rx Front-End Module for Quad-Band GSM / GPRS / EDGE w/ 10 Linear TRx Switch Ports, Dual-Band TD-SCDMA, and TDD LTE Band 39
|
Skyworks Solutions Inc.
|